• 专利标题:   Manufacture of vertical-graphene heat-radiating material involves performing plasma pretreatment of growth substrate, carrying out plasma enhanced chemical vapor deposition on growth substrate, and transferring vertical-graphene.
  • 专利号:   CN103553029-A, CN103553029-B
  • 发明人:   WANG H, XIE X, WANG L, ZHANG Y, LIU J
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B031/04, C09K005/14
  • 专利详细信息:   CN103553029-A 05 Feb 2014 C01B-031/04 201424 Pages: 12 Chinese
  • 申请详细信息:   CN103553029-A CN10534290 31 Oct 2013
  • 优先权号:   CN10534290

▎ 摘  要

NOVELTY - Manufacture of vertical-graphene heat-radiating material involves polishing growth substrate, cleaning, placing growth substrate in reaction chamber, evacuating reaction chamber into vacuum through reducing gas, warming to preset temperature, performing plasma pretreatment of growth substrate, carrying out plasma enhanced chemical vapor deposition on growth surface of growth substrate, and transferring vertical-graphene. USE - Manufacture of vertical-graphene heat-radiating material (claimed). ADVANTAGE - The vertical-graphene heat-radiating material is manufactured efficiently and economically with high specific surface area and excellent cooling efficiency.