▎ 摘　　要

NOVELTY - The electron source has a first electrode formed with a substrate. A second electrode is formed with an electrode film. The electrode film is made of graphene material. A semiconductor layer is formed with an insulation layer. The insulation layer is made by combination of silicon dioxide, aluminum oxide, silicon nitride and boron nitride material. USE - Graphene thin film electron source for use in a vacuum electronic device (claimed). ADVANTAGE - The electron source has better conductivity, high strength and electric power transmission efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene thin film electron source manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene thin film electron source.