▎ 摘　　要

NOVELTY - The utility model claims a GaN-based high electronic mobility transistor epitaxial wafer, belonging to the high electron mobility transistor field. the high electron mobility transistor epitaxial wafer, comprising: a substrate, a graphene layer sequentially deposited on the substrate, the metal nanometer particle layer, three-dimensional nucleation layer, a buffer layer, a GaN channel layer, an AlGaN barrier layer, and a GaN cap layer; the metal nanometre particle layer comprises a plurality of metal nano-particles located on the graphene layer, and each of the metal nano-particles are in contact with the graphene layer, the diameter of the metal nano-particle is 1 to 20nm, the adjacent gap exists between the metal nanometer particle.