▎ 摘　　要

NOVELTY - Manufacture of sulfur-doped graphene-based electrode material involves placing collector material in a plasma-enhanced chemical-vapor deposition vacuum apparatus, carrying out plasma enhanced chemical vapor deposition at 600-800 degrees C under argon atmosphere for 20-60 minutes, supplying hydrogen and methane gas at rate of 5-15 sccm and 10-30 sccm respectively, depositing at 600-800 degrees C for 5-60 minutes, cooling room temperature to form vertically-grown graphene material, soaking vertically-grown graphene material in dibenzyl disulfide solution, annealing and cooling to room temperature. USE - Manufacture of sulfur-doped graphene-based electrode material used for supercapacitor. ADVANTAGE - The sulfur-doped graphene-based electrode material provides supercapacitor with high electronegativity. DETAILED DESCRIPTION - Manufacture of sulfur-doped graphene-based electrode material involves placing collector material in a plasma-enhanced chemical-vapor deposition vacuum apparatus, carrying out plasma enhanced chemical vapor deposition at 600-800 degrees C under argon atmosphere for 20-60 minutes, supplying hydrogen and methane gas at rate of 5-15 sccm and 10-30 sccm respectively, depositing at 600-800 degrees C for 5-60 minutes, cooling room temperature to form vertically-grown graphene material, soaking vertically-grown graphene material in dibenzyl disulfide solution for 3-5 minutes, annealing at 600-1050 degrees C under argon atmosphere for 30-120 minutes, and cooling to room temperature. The concentration of dibenzyl disulfide solution is 3-10 mg/mL.