▎ 摘　　要

NOVELTY - The method involves performing high-molecular weight sintering at first temperature to remove hydrogen, oxygen and nitrogen atoms and form a carbon precursor using a polyimide membrane as the raw material. Second temperature is adjusted to perform graphitization on the carbon precursor to form a multi-layered graphene quantum carbon-based two-dimensional semiconductor material. Doping with a non-metallic material is carried out to form quantum dots in a multi-layered graphene. USE - Method for manufacturing a multi-layered graphene quantum carbon-based semiconductor material. ADVANTAGE - The method enables providing a structure that has an orderly arrangement, is flexible, has a large tortuosity ratio, and extremely small intrafacial dispersion and offset. The method enables achieving large area, low cost, large batch, and continuous reel-to-reel production. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a multi-layered graphene quantum carbon-based semiconductor material.