▎ 摘　　要

NOVELTY - A graphene-gold composite electrode preparing method involves forming a diamond thin film on a silicon wafer substrate using conventional chemical vapor deposition. The substrate is etched to prepare the self-supporting diamond film, when the growth thickness of the film is more than 100 microns, followed by spin-coating a graphene oxide layer on the diamond film, performing graphene oxide reduction process and cooling the furnace naturally to obtain graphene, depositing metal film that is gold thin film on a graphene layer. The resultant product is annealed to obtain the final product. USE - Method for preparing a graphene-gold composite electrode that is utilized in a diamond radiation detector. ADVANTAGE - The method enables preparing the graphene-gold composite electrode with better ohmic contact properties and low contact resistivity, in a simple manner. DETAILED DESCRIPTION - A graphene-gold composite electrode preparing method involves forming a diamond thin film on a silicon wafer substrate using conventional chemical vapor deposition. The substrate is etched to prepare the self-supporting diamond film, when the growth thickness of the film is more than 100 microns, followed by spin-coating a graphene oxide layer on the diamond film at speed of 1000-6000 r/minutes with spin coating amount of 5-30 drops, performing graphene oxide reduction process in a tubular annealing furnace in atmosphere of nitrogen, at tube pressure of 0.5-1 Bar tube temperature of 200-400 degrees C, heating rate of 2 degrees C/minute and holding time of 1-4 hours and cooling the furnace naturally to obtain graphene, depositing metal film that is gold thin film on a graphene layer by using a vacuum deposition or an electron beam evaporation techniques at vapor pressure of 7 x 10-8 - 2.27 x 10-10Bar and deposition rate of 0.5-2A/S nd deposition thickness of 50-200nm. The resultant product is annealed by using a tubular annealing furnace or a vacuum annealing furnace under vacuum atmosphere or nitrogen atmosphere at 300-800 degrees C and annealing rate of 10-30 degrees C/seconds for 10-60 minute to obtain the final product, where the diamond film is polycrystalline diamond film, the silicon wafer substrate is monocrystalline silicon substrate.