▎ 摘　　要

NOVELTY - A graphene semiconductor shield material comprises 0.5-30 wt.% graphene nanosheet and ethylene vinyl acetate. USE - Graphene semiconductor shield material used for middle-voltage and high-voltage electrical cables. ADVANTAGE - The method is simple, low in cost and energy consumption, and easy to control. The graphene semiconductor shield material is ultra-smooth and water tree-resistant, and has low density, excellent semiconduction performance, and high pressure resistance and tensile strength. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of shield material comprising subjecting graphene nanosheet and water to ultrasonic treatment at power of 70-90 W and frequency of 20-25 kHz for 15-30 minutes to obtain graphene solution, adding ethylene vinyl acetate, and stirring at 300-500 revolutions/minute for 30-60 minutes to obtain flocculent mixture material; and washing with deionized water, filtering, vacuum freeze-drying, milling for 10-15 hours, and curing to 160-180 degrees C at 8-15 MPa for 8-12 minutes.