▎ 摘　　要

NOVELTY - The transistor has a transistor unit provided with a graphene channel, a gate electrode, a grid medium layer and a semi-insulation substrate. Two sides of the graphene channel are fixed with the gate electrode. The graphene channel is matched with the grid medium layer that is made of aluminum oxide (Al2O3) material. Thickness of the gate electrode is about 60-400nm. Length and width of the graphene channel are about 40nm-4um and 35-600nm, respectively. The semi-insulation substrate is formed as a 4H-silicon carbide (SiC) substrate and a 6H-silicon carbide substrate. USE - Di-electric aluminum oxide double-gate graphene transistor. ADVANTAGE - The transistor improves carrier mobility and modulating ability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a di-electric aluminum oxide double-gate graphene transistor preparing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a di-electric aluminum oxide double-gate graphene transistor in partial section.