▎ 摘　　要

NOVELTY - Manufacture of graphene film involves flowing raw material gas of compound containing carbon and/or hydrogen on a substrate (5), producing plasma of raw material gas by microwave excitation, and irradiating laser on the substrate. USE - Manufacture of graphene film used for manufacturing electronic device e.g. transistor, photovoltaic device and diode. ADVANTAGE - The method enables easy, economical, environmentally-friendly and safe manufacture of good-quality graphene film having high crystal quality, using simple apparatus. Usage of explosive gas e.g. hydrogen is not required. The obtained graphene film has high transparent rate and low resistivity. Gas other than gas obtained from camphor can be used as raw material. Wide variety of organic compounds having reactivity can be used for carbon source for forming single-crystal graphene film. When the organic compound having carbocyclic ring with distortion is used, then thermal decomposition arises easily on substrate. When organic compound having high boiling point is used, the supply rate of carbon source can be reduced. If there are no atoms other than carbon atom, hydrogen atom and oxygen atom in molecule, it is easy to avoid heterocyclic formation at the time of thermal decomposition, and it is possible to obtain graphene film easily. Since the surface wave plasma of raw material gas is formed on substrate, the growth possibility on substrate is good and can form graphene film directly on various substrates. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the manufacturing apparatus of the graphene film. (Drawing includes non-English language text) Reaction container (1) Waveguide (2) Plasma excitation board (3) Substrate (5) Heating apparatus (7)