• 专利标题:   Graphene pellicle method for extreme ultraviolet lithography, involves attaching carrier to graphene layer, removing substrate from first assembly, and removing first material layer from first assembly.
  • 专利号:   US2018059535-A1, US10007176-B2
  • 发明人:   TU C, CHEN C
  • 专利权人:   TAIWAN SEMICONDUCTOR MFG CO LTD
  • 国际专利分类:   C23C014/18, C23C016/26, C23C028/00, C23F001/00, C23F017/00, G03F001/64, G03F001/62, H01L021/033, C23C014/16
  • 专利详细信息:   US2018059535-A1 01 Mar 2018 G03F-001/64 201818 Pages: 12 English
  • 申请详细信息:   US2018059535-A1 US356386 18 Nov 2016
  • 优先权号:   US382542P, US356386

▎ 摘  要

NOVELTY - The method involves depositing a first material layer over a substrate, depositing a graphene layer over the first material layer forming a first assembly having the substrate, the first material layer, and the graphene layer, attaching a carrier to the graphene layer, removing the substrate from the first assembly, and removing the first material layer from the first assembly. A pellicle frame is mounted to the first assembly and opposite the carrier after the removing of the first material layer. The carrier is detached from the first assembly resulting in a second assembly. USE - Graphene pellicle method for extreme ultraviolet lithography. ADVANTAGE - Avoids breakages during the pellicle's manufacturing, assembling, and handling processes. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of a lithography system that may benefit. Lithography system (100) Radiation source (102) Radiation beam (104) Condenser optic (106) Pellicle (107)