1. 平台首页
  2. 国际专利信息
  • 专利标题:   Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.
  • 专利号:   WO2013038623-A1, US2014162021-A1, JP2013533481-X
  • 发明人:   FUJII T, SATO M
  • 专利权人:   FUJI ELECTRIC CO LTD, FUJI ELECTRIC CO LTD
  • 国际专利分类:   C01B031/02, C30B025/18, C30B029/02, C30B029/68, C23C014/14, C23C014/16, C23C016/26
  • 专利详细信息:   WO2013038623-A1 21 Mar 2013 C01B-031/02 201322 Pages: 12 Japanese
  • 申请详细信息:   WO2013038623-A1 WOJP005647 06 Sep 2012
  • 优先权号:   JP203514

▎ 摘　　要

NOVELTY - Production of graphene involves supplying carbon to a heated transition metal surface, and forming graphene on a buffer thin-film epitaxially grown on nickel(111) substrate. USE - Production of graphene. ADVANTAGE - The method provides graphene having high quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the laminated structure of graphene. Graphene (10) Buffer thin-film (11) Nickel substrate (12)