▎ 摘　　要

NOVELTY - A nickel membrane annealed graphene nanobelt is prepared by placing substrate in chemical vapor deposition system reaction chamber, and vacuumizing; raising chamber temperature to carbonization temperature, introducing propane, and carbonizing substrate to obtain layer of carbonized layer; raising chamber temperature to growth temperature, introducing propane and silane, and performing heteroepitaxial growth of silicon carbide; injecting silicon ions in appointed zone on the grown silicon carbide; pyrolyzing; and electronic beam depositing nickel membrane on substrate. USE - Method for preparation of nickel membrane annealed graphene nanobelt for injecting silicon to 3C-SiC (claimed) used for making microelectronic apparatus. ADVANTAGE - The method is capable of preparing graphene having smooth surface and good continuity. It has low cost and high safety. DETAILED DESCRIPTION - Preparation of nickel membrane annealed graphene nanobelt for injecting silicon to 3C-silicon carbide, comprises: (A) performing standard cleaning on 4-12 in silicon substrate; (B) placing the cleaned substrate in chemical vapor deposition (CVD) system reaction chamber, vacuumizing the reaction chamber to 10-7 mbar; (C) gradually raising temperature of the reaction chamber to carbonization temperature of 1000-1200 degrees C with protection of hydrogen gas, introducing propane at 30 ml/minute, and carbonizing the substrate for 4-8 minutes to obtain a layer of carbonized layer; (D) rapidly raising temperature of the reaction chamber to growth temperature of 1200-1350 degrees C, introducing propane and silane, performing heteroepitaxial growth of silicon carbide (3C-SiC) for 30-60 minutes, gradually cooling to room temperature with the protection of hydrogen gas, and finishing growth of 3C-SiC membrane; (E) injecting silicon ions having energy of 15-30 keV and dosage of 5x 1014-5x 1017/cm2 in appointed zone on the grown 3C-SiC; (F) placing the 3C-SiC membrane sample to an epitaxial furnace having pressure of 0.5 to 1x 10-6 Torr, introducing argon gas, heating to 1200-1300 degrees C, keeping constant temperature of 30-90 minutes, and pyrolyzing 3C-SiC in the appointed zone to obtain carbon membrane; (G) electronic beam depositing nickel membrane having thickness of 300-500 nm on the substrate; and (H) placing the generated carbon membrane sample on the nickel membrane, placing in argon atmosphere, annealing for 10-20 minutes at 900-1200 degrees C, adhering carbon membrane on the membrane to obtain graphene nanobelt, and taking the membrane from the graphene nanobelt. DESCRIPTION OF DRAWING(S) - The drawing is a flow chart showing preparation of nickel membrane annealed graphene nanobelt.