• 专利标题:   Preparing defect-rich metal oxygen (sulfur) chalcogenide/graphene oxide composite material e.g., titanium dioxide material by adding metal lithium sheet, graphene oxide gel and target metal oxygen (sulfur) compound to ethylenediamine.
  • 专利号:   CN110280232-A
  • 发明人:   LI M, PENG P, CHEN J, NIU K, LI J, LIU L
  • 专利权人:   UNIV NORTH CHINA ELECTRIC POWER
  • 国际专利分类:   B01J023/06, B01J023/28, B01J027/051
  • 专利详细信息:   CN110280232-A 27 Sep 2019 B01J-023/06 201983 Pages: 8 Chinese
  • 申请详细信息:   CN110280232-A CN10414165 17 May 2019
  • 优先权号:   CN10414165

▎ 摘  要

NOVELTY - A defect-rich metal oxygen (sulfur) chalcogenide/graphene oxide composite material is prepared by adding metal lithium sheet, graphene oxide gel and target metal oxygen (sulfur) compound to ethylenediamine (EDA), stirring the solution under normal temperature condition, dripping and stirring hydrochloric acid after fully reacting, and freeze-drying after washing the product. USE - Preparation of defect-rich metal oxygen (sulfur) chalcogenide/graphene oxide composite material e.g., titanium dioxide material, zinc oxide and molybdenum oxide, and molybdenum sulfide for introducing sulfur vacancies (all claimed). ADVANTAGE - The method can be carried out at room temperature, is easy to operate, and costs low.