▎ 摘　　要

NOVELTY - Method for growing single-layer graphene involves forming silicon oxide layer (101) on silicon substrate (100), forming multilayer metallic catalyst layer including nickel lower-layered thin film (102) and copper upper-layered thin film (103), on silicon oxide layer, and growing single-layer graphene on multilayer metallic catalyst by chemical vapor deposition (CVD). The thickness ratio of copper upper-layered thin film and nickel lower-layered thin film is 6:3-10:3. USE - Method for growing single-layer graphene used for graphene device (claimed) e.g. single-layer graphene field-effect transistor. ADVANTAGE - The method enables efficient growing of single-layer graphene with high quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene device, which consists of silicon oxide layer formed on silicon substrate, nickel lower-layered thin film on silicon oxide layer, copper upper-layered pattern on nickel lower-layered thin film, multilayer graphene electrode on nickel lower-layered thin film, and single-layer graphene channel on copper upper-layered pattern. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating growing of high-quality single-layer graphene thin film using multilayer metallic catalyst. Silicon substrate (100) Silicon oxide layer (101) Nickel lower-layered thin film (102) Copper upper-layered thin film (103)