• 专利标题:   Pellicle for use in lithography mask assembly for extreme ultraviolet lithography process in semiconductor manufacturing industry to optically transfer patterns onto a substrate, comprises membrane that includes silicon carbide nanostructures with silicon carbide nanotubes.
  • 专利号:   US2023176471-A1, WO2023101972-A1
  • 发明人:   ONEILL J, HART A H C
  • 专利权人:   ENTEGRIS INC, ENTEGRIS INC
  • 国际专利分类:   C01B032/956, G03F001/22, G03F001/64, G03F007/20, G03F001/24, G03F001/62
  • 专利详细信息:   US2023176471-A1 08 Jun 2023 G03F-001/64 202350 English
  • 申请详细信息:   US2023176471-A1 US071296 29 Nov 2022
  • 优先权号:   US285343P, US071296

▎ 摘  要

NOVELTY - The pellicle comprises membrane that includes silicon carbide nanostructures with silicon carbide nanotubes. Membrane includes thickness that is less than 200 nanometers. Nanotubes include silicon carbide layers and graphene layers. USE - Pellicle for use in lithography mask assembly (claimed) for extreme ultraviolet lithography process in semiconductor manufacturing industry to optically transfer patterns onto a substrate. ADVANTAGE - Pellicle provide high mechanical strength and high transmission of radiation of wavelengths that are in the extreme ultraviolet range. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (a) a lithography mask assembly for an extreme ultraviolet lithography process; (b) a method for exposing a photoresist on a substrate to extreme ultraviolet light; DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a lithography system. 100Lithography system 104Illuminator 106Mask assembly 108Mask 118Substrate assembly