• 专利标题:   Vertical single-molecule field effect transistor integrated device consists of two-dimensional material template, ultra-flat metal electrode strip, two-dimensional material insulating support nanohole array and dielectric layer.
  • 专利号:   CN112563330-A, CN112563330-B
  • 发明人:   JIA C, LI P, GUO X
  • 专利权人:   UNIV NANKAI
  • 国际专利分类:   H01L021/336, H01L029/06, H01L029/423, H01L029/78
  • 专利详细信息:   CN112563330-A 26 Mar 2021 H01L-029/78 202138 Pages: 19 Chinese
  • 申请详细信息:   CN112563330-A CN11410903 06 Dec 2020
  • 优先权号:   CN11410903

▎ 摘  要

NOVELTY - A vertical single-molecule field effect transistor integrated device based on two-dimensional material nanopores consists of two-dimensional material template, ultra-flat metal electrode strip, two-dimensional material insulating support nanohole array, self-assembled single molecules, two-dimensional material drain electrode strip array, insulating two-dimensional material dielectric layer and conductive two-dimensional material grid electrode strip array. USE - Vertical single-molecule field effect transistor integrated device. ADVANTAGE - The vertical single-molecule field effect transistor integrated device has excellent stability, workability and large-scale integration processability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of vertical single-molecule field effect transistor integrated device.