▎ 摘　　要

NOVELTY - A single electron transistor is fabricated by providing substrate (332) and source electrode (302A, 302B), drain electrode (304A, 304B), and gate electrode (306A, 306B) on planar surface of substrate, where source electrode and drain electrode are spaced apart from one another by a gap; electrifying source electrode and drain electrode; electrospray-depositing single nanometer-scale conductive particle (310A, 310B) in the gap between electrified source electrode and drain electrode; depositing carbon nanotube(s) on the substrate; and subjecting the carbon nanotube to dielectrophoresis to position the carbon nanotube within 1 nm of the single nano-scale particle, establishing 1st connection (334A) between source electrode and conductive particle, and 2nd connection (334B) between 2nd drain electrode and conductive particle. USE - Fabrication of a single electron transistor (SET) of a circuit (claimed). Can also be used for a field effect transistor (FET). ADVANTAGE - The method provides a single electron transistor (SET) with reduced dimensions and current density, thus reducing the heat burden on the SET, and decreasing cost and increasing performance of transistors such as conventional field effect transistors (FETs). The SET can be fabricated in a simple and cost effective manner. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) single electron transistor; and (2) circuit. DESCRIPTION OF DRAWING(S) - The drawing shows a fragmented, perspective view of a set of single electron transistors on a common substrate. Source electrode (302A, 302B) Drain electrode (304A, 304B) Gate electrode (306A, 306B) Conductive particle (310A, 310B) Substrate (332) 1st connection (334A) 2nd connection (334B)