▎ 摘　　要

NOVELTY - Synthesizing reduced graphene oxide (rGO)/nickel tungstate film on solid substrate comprises immersing substrate in an aqueous solution of rGO, nickel(II) ion and tungstate to form rGO/nickel tungstate film on the surface of the substrate, where the concentration of anionic precursors sodium tungstate dihydrate is 0.05-0.2 M, the concentration of cationic precursors of nickel sulfate hexahydrate is 0.05-0.2 M, the concentration of rGO suspension is 8-16 mg/ml, and the number of deposition cycles varies is 50-120. USE - The method is useful for synthesizing reduced graphene oxide (rGO)/nickel tungstate film on solid substrate, where the rGO/nickel tungstate film is used in an electrochemical energy storage application with specific capacitance and specific capacity of 1560 F/g and 260 Ah/g at 2 mV/second (claimed) and in supercapacitor application. ADVANTAGE - The method: easily controls the deposition rate and the thickness of the film over a wide range by changing the deposition cycles; does not require high quality target and/or substrates nor does it require vacuum at any stage, which is a great advantage if the method will be used for industrial application; offers extremely easy way to dope film with virtually any element in any proportion by merely adding it in some form of the cationic solution; operates at room temperature that can produce films on less robust materials; does not cause local over heating that can be detrimental for materials to be deposited unlike high power methods e.g. radio frequency magnetron sputtering; is virtually no restrictions on substrate material, dimensions or its surface profile; is relatively inexpensive, simple and convenient for large area deposition; and is cost-effective and binder-free successive ionic layer adsorption and reaction.