• 专利标题:   Synthesizing reduced graphene oxide (rGO)/nickel tungstate film on solid substrate used in electrochemical energy storage application, comprises immersing substrate in aqueous solution of rGO, nickel(II) ion and tungstate.
  • 专利号:   IN202221039656-A
  • 发明人:   LOKHANDE C D, PATIL D J, MALAVEKAR D B, KHOT S D, NIKAM R P
  • 专利权人:   PATIL EDUCATION SOC D Y
  • 国际专利分类:   C01B021/072, C01B032/23, H01M004/36, H01M004/587, H01M004/62
  • 专利详细信息:   IN202221039656-A 02 Sep 2022 H01M-004/36 202284 Pages: 18 English
  • 申请详细信息:   IN202221039656-A IN21039656 11 Jul 2022
  • 优先权号:   IN21039656

▎ 摘  要

NOVELTY - Synthesizing reduced graphene oxide (rGO)/nickel tungstate film on solid substrate comprises immersing substrate in an aqueous solution of rGO, nickel(II) ion and tungstate to form rGO/nickel tungstate film on the surface of the substrate, where the concentration of anionic precursors sodium tungstate dihydrate is 0.05-0.2 M, the concentration of cationic precursors of nickel sulfate hexahydrate is 0.05-0.2 M, the concentration of rGO suspension is 8-16 mg/ml, and the number of deposition cycles varies is 50-120. USE - The method is useful for synthesizing reduced graphene oxide (rGO)/nickel tungstate film on solid substrate, where the rGO/nickel tungstate film is used in an electrochemical energy storage application with specific capacitance and specific capacity of 1560 F/g and 260 Ah/g at 2 mV/second (claimed) and in supercapacitor application. ADVANTAGE - The method: easily controls the deposition rate and the thickness of the film over a wide range by changing the deposition cycles; does not require high quality target and/or substrates nor does it require vacuum at any stage, which is a great advantage if the method will be used for industrial application; offers extremely easy way to dope film with virtually any element in any proportion by merely adding it in some form of the cationic solution; operates at room temperature that can produce films on less robust materials; does not cause local over heating that can be detrimental for materials to be deposited unlike high power methods e.g. radio frequency magnetron sputtering; is virtually no restrictions on substrate material, dimensions or its surface profile; is relatively inexpensive, simple and convenient for large area deposition; and is cost-effective and binder-free successive ionic layer adsorption and reaction.