• 专利标题:   Preparing diamond-graphene heterostructure composite material involves placing diamond plated with metal dielectric film into tubular furnace under hydrogen gas inlet, rising temperature rapidly, annealing and cooling to room temperature.
  • 专利号:   CN108238597-A
  • 发明人:   DAI D, LIN Z, JIANG N, LIU Y
  • 专利权人:   NINGBO INST MATERIALS TECHNOLOGY ENG C
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN108238597-A 03 Jul 2018 C01B-032/184 201855 Pages: 9 Chinese
  • 申请详细信息:   CN108238597-A CN11206231 23 Dec 2016
  • 优先权号:   CN11206231

▎ 摘  要

NOVELTY - Preparing diamond-graphene heterostructure composite material involves placing diamond plated with a metal dielectric film into tubular furnace under hydrogen gas inlet, rising temperature rapidly, annealing and cooling to room temperature to obtain diamond-metal dielectric film-graphene composite material, and etching diamond-metal dielectric film-graphene composite material to obtain diamond-graphene heterostructure composite. USE - Method for preparing diamond-graphene heterostructure composite material. ADVANTAGE - The method enabes to prepare diamond-graphene heterostructure composite material which avoids the transferring process of the graphene, has high bonding force and good performance.