▎ 摘　　要

NOVELTY - Light-controlled graphene-modulated heterogeneous transistor comprises gate electrode, insulating layer, graphene nano-band array, source electrode, drain electrode, and organic semiconductor layer, where the gate electrode is provided with insulating layers, the insulating sheet is provided on the surface of the graphene nanosheet graphene surface, the source electrode and the drain electrode are arranged along the graphene direction of the nano graphene band array, and the source electrode is arranged between the two ends of the nanorad array, the graphene semiconducting layer is provided between the nano band array and the surface band of the nanoporous graphene band, the nano band width is set to make it excite the graphene plasmons in the infrared band. USE - Light-controlled graphene-modulated heterogeneity transistor for manufacturing an infrared sensor (claimed). ADVANTAGE - The transistor organically combines the graphene super-structure surface organic semiconductor, using infrared light to directly control the Fermi level of the graphene, and provides a method for adjusting graphene controlling the concentration of the carrier, so as to realize the flexible control of graphene plasmon in the infrared band, the performance of the transistor is improved, by applying voltage to the intrinsic graphene obtaining the most optimized graphene the carrier concentration and plasmo response, to obtain the optimized infrared light control effect, the control method is simple, and does not need to be connected with other instruments. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a method for preparation of the light-regulated transistor which involves obtaining a gate substrate having an insulating layer, transferring the single-layer graphene to the insulating layer surface, etching the trench on the surface layer graphene forming a graphene, using the method of graphene evaporation on the graphene surface an organic semiconductor layer is arranged between the band of graphene nano-band array and surface band of the nano graphene band array, preferably etching is done by electron beam etching, oxygen plasma method in the single layer graphene graphene, preferably the bandwidth of the graphene nano array is 20-60 nm; and (2) an infrared light sensor which comprises the graphene junction transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of the transistor structure based on the graphene junction.