▎ 摘　　要

NOVELTY - A method for assisting growth of graphene on 6H/4H silicon carbide (SiC) silicon surface by composite metal comprises polishing 6H/4H-SiC silicon wafer surface, cutting and cleaning; placing in chemical vapor deposition (CVD) furnace chamber and quickly vacuumizing and heating; filling argon and hydrogen, controlling pressure, heating up, hydrogen etching and reducing temperature to obtain SiC substrate; depositing carbon layer on etched SiC substrate and depositing copper layer on surface of deposited metal to obtain 6H/4H-SiC wafer/metal complex substrate; placing complex substrate in CVD furnace chamber, vacuumizing, filling argon and hydrogen, heating up to allow composite metal to form alloy, growing graphene under external carbon source, filling argon and hydrogen, fast cooling and growing graphene on interlayer of 6H/4H-SiC wafer/composite metal to obtain 6H/4H-SiC wafer/substrate with grown graphene; and removing metal on 6H/4H-SiC surface, washing and drying to obtain product. USE - Method for assisting growth of graphene on 6H/4H silicon carbide (SiC) silicon surface by composite metal. ADVANTAGE - The method prevent damage to graphene during traditional CVD method transfer process, reduces influence of substrate buffer layer and has better effect than single metal substrate and provides graphene with better quality. DETAILED DESCRIPTION - A method for assisting growth of graphene on 6H/4H-SiC silicon surface by composite metal comprises polishing 6H/4H-SiC silicon wafer surface, cleaning and cutting to thickness of 300-400 mu m; placing processed 6H/4H-SiC wafer in CVD furnace chamber on upward position and quickly vacuumizing and heating at 1000-1100 degrees C for 5-20 minutes; introducing high-purity argon and high-purity hydrogen to reaction chamber, controlling pressure at 300-800 mbar, raising temperature to 1450-1600 degrees C, subjecting SiC substrate of 6H/4H-SiC wafer hydrogen etching for 10-60 minutes and reducing temperature to room temperature to obtain SiC substrate; depositing 100-800 nm thick carbon layer on etched SiC substrate and depositing 10-200 nm thick copper layer on surface of deposited metal to obtain 6H/4H-SiC wafer/composite metal complex substrate; placing 6H/4H-SiC wafer/composite metal complex substrate in CVD furnace chamber with silicon surface facing upward, vacuumizing, injecting high purity argon and high-purity hydrogen, controlling pressure at 100-300 mbar, raising temperature to 1350-1550 degrees C allowing composite metal to form alloy, which provides catalytic effect for graphene growth, growing graphene for 10-30 minutes under supplied external carbon source condition, finishing growing, continuously introducing high-purity argon and high-purity hydrogen, fast cooling to 800-900 degrees C, cooling naturally to room temperature and growing graphene on interlayer of 6H/4H-SiC wafer and composite metal to obtain 6H/4H-SiC wafer/substrate with grown graphene; and removing metal on surface of 6H/4H-SiC wafer/substrate with grown graphene, washing and drying to obtain product.