▎ 摘　　要

NOVELTY - Masking block comprises: a base substrate (10); a gamma-alumina thin film disposed on the base substrate; and a hexagonal boron nitride thin film doped with carbon and oxygen and disposed on the gamma-alumina thin film, where an amount of carbon in the hexagonal boron nitride thin film is 1-15 atom%. The two-dimensional material includes graphene. The pattern includes graphene is synthesized in an atmosphere including a carbon source and an oxygen-containing material. The two-dimensional material includes hexagonal boron nitride or a transitional metal dichalcogenide. USE - The masking block is useful for: forming a pattern (claimed); forming a pattern of two-dimensional material; and manufacturing various electronic elements including an electro-optical modulator, a switching element, a transistor, and optical device. ADVANTAGE - The masking block: is easily bondable and debondable to a bulk material substrate; has a hybrid configuration of gamma-alumina and hexagonal boron nitride i.e. utilized for directly synthesizing a pattern of a two-dimensional material, hence prevents slip, and may be stably bonded to a growth substrate in the process of synthesizing the pattern; may prevent the pattern i.e. transcribed or moved and the pattern or the growth substrate is damaged; and remarkably improves reliability of directly synthesizing a pattern of a two-dimensional material. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) forming a pattern; and (2) manufacturing a masking block. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view displaying a method for manufacturing a masking block. Base substrate (10) Amorphous alumina thin film (20)