• 专利标题:   Large-area hexagonal boron nitride thin film used for forming gas/moisture barrier, comprises boron nitride crystal planes and having preset average surface roughness.
  • 专利号:   KR2022124521-A
  • 发明人:   KIM S M, KO H
  • 专利权人:   UNIV SOOKMYUNG WOMENS IND ACAD COOP
  • 国际专利分类:   B01D053/22, C01B021/064, C01B032/184
  • 专利详细信息:   KR2022124521-A 14 Sep 2022 C01B-021/064 202285 Pages: 30
  • 申请详细信息:   KR2022124521-A KR028277 03 Mar 2021
  • 优先权号:   KR028277

▎ 摘  要

NOVELTY - A large-area hexagonal boron nitride thin film comprises boron nitride crystal planes and having an average surface roughness (RMS) of less than 10 nm. USE - Large-area hexagonal boron nitride thin film used for forming gas/moisture barrier (claimed). ADVANTAGE - The large-area hexagonal boron nitride thin film has excellent uniformity, sufficient thickness and large area. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for production of large-area hexagonal boron nitride, which involves improving the average surface roughness of the crystal plane of the metal substrate by performing a first heat treatment on the metal substrate, and forming a hexagonal boron nitride thin film on the metal substrate.