▎ 摘　　要

NOVELTY - Film forming method for forming a carbon film, involves (a) cleaning the interior of a treatment container by using an oxygen-containing plasma in a state where no substrate is present inside the treatment container, (b) subsequently extracting and removing oxygen inside the treatment container by using plasma in a state where no substrate is present inside the treatment container, (c) introducing a substrate into the treatment container and forming a carbon film on the substrate through plasma chemical vapor deposition (CVD) in which a treatment gas including a carbon-containing gas is used, and (d) repeatedly performing the cleaning, the extraction and removal of oxygen, and the film formation. USE - The film forming method is used for forming a carbon film. The method is used for forming a graphene film as a carbon film, and for forming another carbon film such as an amorphous carbon film and a diamond-like carbon film. ADVANTAGE - The method and apparatus suppress the influence of residual oxygen when forming a carbon film and the influence of oxygen on the surface of a substrate to be treated before forming a carbon film, and suppress the influence of oxygen such as oxidation of the substrate surface during film formation of the graphene film and oxygen uptake into the film. The method reduces the amount of oxygen in the treatment container as much as possible when forming the graphene film. The method dissociates the carbon-containing gas into a state suitable for the growth of graphene at a relatively low temperature, and directly forms the graphene film on the substrate without damaging the base or the graphene film being formed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a film forming apparatus for forming a carbon film, comprising a treatment container that houses the substrate and performs film formation processing, a plasma source that generates plasma in the treatment container, a heating mechanism that heats the inside of the treatment container, a gas supply mechanism that supplies gas into the treatment container, an exhaust mechanism that exhausts the inside of the treatment container, and a control unit, where the control unit cleans the inside of the treatment container with plasma containing oxygen in a state where the substrate does not exist in the treatment container, and after that, oxygen in the processing container is extracted and removed by plasma in a state where the substrate does not exist in the treatment container, and where the substrate is carried into the treatment container so that a carbon film on the substrate by plasma CVD using a treatment gas containing a carbon-containing gas is repeatedly formed, and the plasma source, the heating mechanism, the gas supply mechanism, and the exhaust mechanism are controlled.