▎ 摘　　要

NOVELTY - The method involves preparing a substrate (102) including a circuit and a first insulating film (108) covering the circuit. The layer containing the graphene is formed on the first insulating film. A semiconductor layer (151,153) including the luminescent layer is formed on a layer containing the graphene. The semiconductor layer is etched. The light-emitting element (150) having a bottom surface is formed on a layer containing the graphene and including a light-emitting surface (153S) which is a surface opposite to the bottom surface. A wiring layer (160) is formed on the second insulating film (156). The first via (161d) is provided between the wiring layer and the circuit that are electrically connected. The light emitting element is electrically connected to circuit through the wiring layer. USE - Method for manufacturing image display device (claimed). ADVANTAGE - The transfer process of a light emitting element is shortened and the yield is improved. The miniaturization of the light emitting element is achieved. The high definition image display device is realized. The degree of freedom in layout by appropriately selecting the shape, arrangement of a light emitting element in a plan view is improved. The light extraction efficiency is improved. Since the translucent electrode is provided over the light emitting surface, the connection area with the light emitting surface is increased, the contact resistance is reduced, and the luminous efficiency of the light emitting element is improved. The degree of freedom of circuit arrangement is improved, and the integration density is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an image display device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a sub-pixel of image display device. 102Substrate 108,156Insulating film 150Light-emitting element 151,153Semiconductor layer 153SLight-emitting surface 160Wiring layer 161dVia