▎ 摘　　要

NOVELTY - The graphene electronic device comprises: a substrate (110); a hydrophobic polymer formed on the substrate; a graphene channel layer (130) directly formed on the hydrophobic polymer; a source electrode (142) arranged on an end of the graphene channel layer and a drain electrode (144) arranged on another end of the graphene channel layer; a gate oxide (112) for covering the graphene channel layer exposed by the source electrode and the drain electrode; and a gate electrode arranged on a portion of the graphene channel layer between the source electrode and the drain electrode. USE - The graphene electronic device is useful as a FET and a radio frequency transistor. ADVANTAGE - The device prevents or reduces adsorption of impurities to be transferred to the graphene and impurities transferred to the heat-treated graphene channel layer using the hydrophobic polymer layer and the passivation layer thus achieving desired device characteristics. DETAILED DESCRIPTION - The graphene electronic device comprises: a substrate (110); a hydrophobic polymer formed on the substrate; a graphene channel layer (130) directly formed on the hydrophobic polymer; a source electrode (142) arranged on an end of the graphene channel layer and a drain electrode (144) arranged on another end of the graphene channel layer; a gate oxide (112) for covering the graphene channel layer exposed by the source electrode and the drain electrode; and a gate electrode arranged on a portion of the graphene channel layer between the source electrode and the drain electrode. The graphene channel layer comprises a mono-layer or bi-layer graphene. An INDEPENDENT CLAIM is included for a method for fabricating a graphene electronic device. DESCRIPTION OF DRAWING(S) - The figure shows a schematic sectional view of a graphene electronic device. Substrate (110) Gate oxide (112) Graphene channel layer (130) Source electrode (142) Drain electrode. (144)