• 专利标题:   LED comprises a substrate comprising epitaxial growth surface, a semiconductor epitaxial layer comprising first and second semiconductor layers and active layer, a first electrode, a second electrode, and a graphene layer.
  • 专利号:   US2013285105-A1, CN103378234-A, TW201344952-A, US8823044-B2, TW501420-B1, CN103378234-B
  • 发明人:   WEI Y, FAN S
  • 专利权人:   HON HAI PRECISION IND CO LTD, UNIV TSINGHUA, HONGFUJIN PRECISION IND SHENZHEN CO LTD, UNIV TSINGHUA, HON HAI PRECISION IND CO LTD
  • 国际专利分类:   H01L033/36, H01L033/02, H01L033/26, H01L033/32, B82Y099/00, H01L033/10, H01L033/40
  • 专利详细信息:   US2013285105-A1 31 Oct 2013 H01L-033/36 201373 Pages: 28 English
  • 申请详细信息:   US2013285105-A1 US689730 29 Nov 2012
  • 优先权号:   CN10122505

▎ 摘  要

NOVELTY - LED (20) comprises: substrate comprising epitaxial growth surface; semiconductor epitaxial layer on epitaxial growth surface of substrate, where the semiconductor epitaxial layer comprises first semiconductor layer (120), active layer (130) and second semiconductor layer (140), the active layer is between the first and second semiconductor layers; first electrode electrically connected with second semiconductor layer; second electrode electrically connected with first semiconductor layer; and graphene layer (110) on at least one of the first semiconductor layer and second semiconductor layer. USE - Used as LED. ADVANTAGE - The LED: exhibits improved quality and light extraction efficiency; utilizes the patterned graphene layer, which exhibits excellent conductivity, prevents lattice dislocation between the epitaxial crystal grains and the substrate, and can be manufactured in a simple and cost effective manner; and can be manufactured by a method, which avoids complex sputtering and etching process, hence it is simple. DETAILED DESCRIPTION - LED (20) comprises: a substrate comprising an epitaxial growth surface; a semiconductor epitaxial layer on the epitaxial growth surface of the substrate, where the semiconductor epitaxial layer comprises a first semiconductor layer (120), an active layer (130) and a second semiconductor layer (140), the active layer is between the first and second semiconductor layers, and the first semiconductor layer is on the epitaxial growth layer of the substrate; a first electrode electrically connected with the second semiconductor layer; a second electrode electrically connected with the first semiconductor layer; and a graphene layer (110) on at least one of the first semiconductor layer and the second semiconductor layer. DESCRIPTION OF DRAWING(S) - The figure shows a three-dimensional view of the LED. LED (20) Graphene layer (110) First semiconductor layer (120) Active layer (130) Second semiconductor layer (140)