• 专利标题:   Gallium nitride microstructure, has graphene layer that is provided on substrate, and gallium-nitride layer that is formed on graphene layer.
  • 专利号:   KR2022139473-A
  • 发明人:   PARK J H
  • 专利权人:   ELECTRONICS TELECOM RES INST
  • 国际专利分类:   H01L021/02
  • 专利详细信息:   KR2022139473-A 17 Oct 2022 H01L-021/02 202287 Pages: 17
  • 申请详细信息:   KR2022139473-A KR044943 07 Apr 2021
  • 优先权号:   KR044943

▎ 摘  要

NOVELTY - The structure has a graphene layer formed on a substrate. A gallium nitride layer is formed on the graphene layer, where the gallium-nitride layer includes m-plane gallium nano-metal-oxide (GaN) crystals and c-plane GaN crystals that are formed on an upper surface and a lower surface of the substrate, respectively. The GaN crystal is grown in a plane direction from the surface of graphene layer. The graphene layer and theGaN layer are formed in the substrate. USE - Gallium nitride microstructure. ADVANTAGE - The microstructure reduces defects in the graphene layer, and is simple to process. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the gallium nitride microstructure. 101Gallium nitride microstructure 110Substrate 120Graphene layer 130Gallium nitride layer