▎ 摘　　要

NOVELTY - The structure has a thermo-sensitive film layer fixedly connected with an upper end of a protective layer. The thermo-sensitive film layer is provided with an amorphous germanium silicon film. Two sides of the amorphous germanium silicon film are fixedly connected with a vanadium oxide film. The amorphous germanium silicon film and the vanadium oxide film are formed with a gap. The vanadium oxide film is vanadium pentoxide heat-sensitive film, where a material of a carrier concentration enhancing layer is graphene composite ion and vanadium oxide. USE - Dual-mode non-refrigeration infrared detector heat-sensitive layer structure. ADVANTAGE - The structure provides different working scenes with wide application range and low operation cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a dual-mode non-refrigeration infrared detector heat-sensitive layer structure manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a dual-mode non-refrigeration infrared detector heat-sensitive layer structure. (Drawing includes non-English language text).