▎ 摘　　要

NOVELTY - The method involves providing silicon fin on a surface of a substrate (12). A silicon carbide fin (16) is formed on each bare sidewall of silicon fin. A graphene nanoribbon (32) is formed on a sidewall of each carbide fin. A gate structure (35) oriented perpendicular is formed to each carbide fin and silicon fin. The gate structure overlaps a portion of each graphene nanoribbon and located atop a portion of each silicon carbide fins and silicon fin. The portion of each graphene nanoribbon overlapped by gate structure defines a channel region of semiconductor structure. USE - Method for forming semiconductor structure. ADVANTAGE - More uniform control is allowed over the fin thickness than achieved with lithography and patterning of a silicon carbide layer. Source and drain regions can be formed in the graphene regions over the non-patterned portions of the silicon carbide layer and the portion of the carbon nanotube that extends outside the gate region. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating the method for forming semiconductor structure. Substrate (12) Insulating layer (14) Silicon carbide fin (16) Graphene nanoribbon (32) Gate structure (35)