• 专利标题:   Forming a graphite-based structure e.g. diode, transistor or LED on a substrate e.g. glass, comprises patterning a substrate to form elements on substrate, and concurrently generating a first graphene layer and a second graphene layer.
  • 专利号:   US8580658-B1, WO2014100789-A1
  • 发明人:   DAVIS M A
  • 专利权人:   SOLAN LLC, SOLAN LLC, DAVIS M A
  • 国际专利分类:   H01L021/20, H01L021/02, H01L029/16, H01L029/66, H01L029/735, H01L029/778, H01L029/861
  • 专利详细信息:   US8580658-B1 12 Nov 2013 H01L-021/20 201376 Pages: 39 English
  • 申请详细信息:   US8580658-B1 US910026 04 Jun 2013
  • 优先权号:   US745464P, US910026

▎ 摘  要

NOVELTY - Forming graphite-based structure on substrate (102) comprises: (A1) patterning substrate to form many elements on substrate, where each respective element is separated from adjacent element on substrate by corresponding trench in many trenches in the substrate, a first element has first surface, a first trench separates first element from adjacent element and has second surface, and first and second surfaces are separated by first side wall of first element; and (B1) concurrently generating first graphene layer (302-1) on entire first surface and second graphene layer on entire second surface. USE - The method is useful for forming a graphite-based structure on a substrate, where the graphite-based structure is diode, transistor, LED, solar cell and/or photodetector (all claimed). ADVANTAGE - The method: provides the graphite-based structure, which exhibits desired topography and high packing densities, and provides additional surface areas for absorbing or emitting photons, thus enhancing efficiency of solar cells or photodetectors; can be performed in a simple manner; produces separated graphene layers on selected surfaces, thus reducing or eliminating loss of surface areas, and eliminating additional processes for separating the graphene layers, as compared to conventional methods; and provides controllable, reliable and precise graphite-based structures. DETAILED DESCRIPTION - Forming a graphite-based structure on a substrate (102), comprises: (A1) patterning the substrate to form many elements on the substrate, where each respective element is separated from an adjacent element on the substrate by a corresponding trench in many trenches in the substrate, a first element has a first surface, a first trench separates the first element from an adjacent element and has a second surface, the first and second surfaces are separated by a first side wall of the first element, the first surface is characterized by a first elevation, the second surface is characterized by a second elevation, the first elevation is other than the second elevation, and a first orthogonal projection of the first surface and a second orthogonal projection of the second surface on a common plane are contiguous or overlapping; and (B1) concurrently generating a first graphene layer (302-1) on the entire first surface and a second graphene layer on the entire second surface. The second graphene layer has a thickness that is less than a difference in the first and second elevations, thus creating the graphite-based structure in which the second graphene layer is isolated from the first graphene layer. The first and second graphene layers comprise at least one graphene sheet. An INDEPENDENT CLAIM is also included for a graphite-based structure fabricated by the method, where the graphite-based structure includes at least one diode, at least one transistor, at least one LED, at least one solar cell and/or at least one photodetector. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a graphene device topography. Substrate (102) Surface of substrate (202) Surfaces of the elements (204) Surface of trenches (206) First graphene layer (302-1)