• 专利标题:   Method for remote epitaxial growth of nitride single crystal thin film based on ferroelectric material substrate comprising adjusting temperature of ferroelectric material substrate, and cooling ferroelectric material substrate.
  • 专利号:   CN114277443-A, CN114277443-B
  • 发明人:   XU K, WANG J, WANG Y, XU Y, QU Y
  • 专利权人:   CHINESE ACAD SCI SUZHOU NANOTECH NANO, SUZHOU INST NANOTECH NANOBIONICS
  • 国际专利分类:   C30B025/18, C30B029/40, H01L021/02
  • 专利详细信息:   CN114277443-A 05 Apr 2022 C30B-029/40 202240 Chinese
  • 申请详细信息:   CN114277443-A CN11625327 28 Dec 2021
  • 优先权号:   CN11625327

▎ 摘  要

NOVELTY - Method for remote epitaxial growth of a nitride single crystal thin film based on a ferroelectric material substrate comprising adjusting temperature of ferroelectric material substrate to Curie temperature point of ferroelectric material, and applying electric field to ferroelectric material substrate to perform polarization treatment, adjusting polarization intensity of ferroelectric material substrate to 50-120 muC/cm2, cooling ferroelectric material substrate, covering surface of ferroelectric material substrate with a two-dimensional material, and epitaxially nitride epitaxial layer grown on surface of two-dimensional material. USE - The method is useful for remote epitaxial growth of nitride single crystal thin film based on ferroelectric material substrate. ADVANTAGE - The method improves single crystal degree of the nitride epitaxial layer to obtain nitride thin film with high quality and consistent polarity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for (1) Nitride single crystal thin film formed by the method. (2) A semiconductor device comprising the nitride single crystal thin film DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view showing the growth of a nitride single crystal thin film based on ferroelectric material substrate remote epitaxial growth (Drawing includes non-English language text).