▎ 摘　　要

NOVELTY - The device has an aluminum nitride substrate layer whose upper side is formed with a graphene layer. An upper side of the graphene layer is formed with a superconducting thin film layer. A Titanium film layer is formed on the graphene layer and the superconducting thin film layer. The superconducting thin film layer comprises a lower side of phonon superconducting thin film layer and an electronic superconductive film layer. The phonon superconducting thin film layer is made of Gold and Palladium materials. The electronic superconducting thin film layer is made of Titanium material. USE - Aluminum nitride-base graphene TES superconducting device. ADVANTAGE - The device has high thermal coupling coefficient, and effectively reduces recovering time of a TES device and response speed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an aluminum nitride-base graphene TES superconducting device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of an aluminum nitride-base graphene TES superconducting device. '(Drawing includes non-English language text)'