▎ 摘　　要

NOVELTY - The method involves contacting silicon carbide and silicon-containing gas at temperature and background pressure for a particular time sufficient to re-arrange the silicon carbide to atomic step-free surface. Silicon atoms that evaporate at contacting temperature is replaced by the silicon-containing gas to prevent net loss of silicon atoms, where the silicon-containing gas is formed from a silicon-containing compound selected from a group consisting of silane, disilane, dichlorosilane, methylsilane, chlorosilane, trichlorosilane, dimethylsilane and trimethylsilane. USE - Method for eliminating atomic steps from silicon carbide surface used for graphene film of electronic device. ADVANTAGE - The method prevents decomposition of the silicon carbide into the graphene during heating by setting the background pressure of the silicon-containing gas or vapor without net loss of silicon atoms. The method enables reducing formation of a number of graphene layers, thus preventing decomposition of the silicon carbide into the graphene and eliminating the atomic steps from the silicon carbide surface in an efficient manner. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating a method for eliminating atomic steps from a silicon carbide surface. Silicon carbide wafer (202)