▎ 摘　　要

NOVELTY - Separating carbon structure including graphene, carbon nanotube or semiconductor nanowire deposited on a seed structure, comprises providing carbon structure deposited on seed structure into a processing chamber of a chemical vapor deposition reactor, heating carbon structure and seed structure, supplying at least one etching gas having metal oxides (AOmXn) (I), (AOmXnY1p) (II) or (AmXn) (III), converting seed structure by a chemical reaction with etching gas into gaseous reaction product, and removing gaseous reaction product from processing chamber by means of carrier gas flow. USE - The method is useful for separating carbon structure (claimed). DETAILED DESCRIPTION - Separating carbon structure including graphene, carbon nanotube or semiconductor nanowire deposited on a seed structure (2), comprises (a) providing the carbon structure deposited on the seed structure in a processing chamber of a chemical vapor deposition reactor, (b) heating the carbon structure having a substrate (3) and the seed structure, (c) supplying at least one etching gas having metal oxides of formula (AOmXn) (I), (AOmXnY1p) (II) or (AmXn) (III), (d) converting the seed structure by a chemical reaction with the etching gas into gaseous reaction product, and (e) removing the gaseous reaction product from the processing chamber by means of carrier gas flow. A = S, C or N; X, Y1 = halo; and m, n, p = greater than zero. An INDEPENDENT CLAIM is also included for device comprising a source for providing the etching gas, preferably a container for storing liquid which is generated by evaporating the etching gas. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the method for Separating carbon structure. Carbon structure (1) Seed structure (2) Substrate (3)