• 专利标题:   Manufacturing semiconductor by forming mask layer which covers substrate, laminating graphene layer on surface of substrate, and making surface of graphene layer crystal-grow a semiconductor crystal.
  • 专利号:   JP2021175694-A
  • 发明人:   NARUTSUKA S
  • 专利权人:   UNIV MEIJO
  • 国际专利分类:   C30B029/38, C30B025/18, H01L021/205
  • 专利详细信息:   JP2021175694-A 04 Nov 2021 C30B-029/38 202192 Pages: 16 Japanese
  • 申请详细信息:   JP2021175694-A JP081130 01 May 2020
  • 优先权号:   JP081130

▎ 摘  要

NOVELTY - A semiconductor is manufactured by forming, in a different position on a substrate, mask layer which covers a substrate, laminating graphene layer on surface of substrate, and making surface of the graphene layer laminated on the surface of the substrate crystal-grow a semiconductor crystal. USE - Manufacture of semiconductor. ADVANTAGE - A semiconductor with favorable quality can be manufactured.