▎ 摘　　要

NOVELTY - The method involves growing a silicon nitride layer over a silicon substrate. A polymethyl methacrylate spin is coated with silicon nitride. A masking layer is formed with an electronic beam. A silicon piece is provided with an observation image under an optical microscope. A silicon nitride film is formed with a silicon nitride membrane. An interdigital electrode is connected with a drying tank. An image is etched in the optical microscope. An ultrasonic wave machine is connected with a graphene nano device. USE - Graphene nano device manufacturing method. ADVANTAGE - The method enables providing pattern in a small size and avoiding damage in the graphene nano device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene nano device.