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  • 专利标题:   Multilayer graphene structure for use in graphene based magnetoresistance sensor of e.g. mobile phones, has graphene layers arranged on substrate, where charge mobility and carrier density of tuned layer are tunable by gate voltage.
  • 专利号:   WO2015099614-A1, SG11201605221-A1, CN105980872-A, EP3087405-A1, US2016320458-A1, JP2017509139-W, EP3087405-A4, RU2016128014-A
  • 发明人:   KALON G, YANG H, SHIN Y J, CASTRO A H, SHEN R, CASTRO N A H, SHIN Y YU
  • 专利权人:   UNIV SINGAPORE NAT
  • 国际专利分类:   B82Y025/00, G01R033/09, H01F010/00, H01L043/08, H01L051/00, H01L051/30
  • 专利详细信息:   WO2015099614-A1 02 Jul 2015 G01R-033/09 201546 Pages: 38 English
  • 申请详细信息:   WO2015099614-A1 WOSG000619 26 Dec 2014
  • 优先权号:   US964268P, WOSG000619, US15107628

▎ 摘　　要

NOVELTY - The structure (120) has graphene layers arranged on a substrate (129). The graphene layers comprise a gate voltage tuned layer and an effective graphene layer that includes graphene layers, where a magnetoresistance ratio of the structure is determined by difference in charge mobility and carrier density between the gate voltage tuned layer and the effective graphene layer, and the charge mobility and the carrier density of the gate voltage tuned layer are tunable by gate voltage applied to the structure. The gate voltage tuned layer is arranged below the effective graphene layer. USE - Multilayer graphene structure for use in a magnetic field sensor (claimed) i.e. graphene based magnetoresistance sensor, of refrigerators, mobile phones, washing machines and laptops, for magnetic recording application and magnetic field sensing application e.g. position sensing application and speed sensing application. Can also be used in a Hall sensor, an optical pumping device and a nuclear precession or superconducting quantum interference device (SQUID). ADVANTAGE - The structure significantly enhances magnetoresistance due to improved mobility in comparison to silicon oxide substrate. The structure performs resistance measurement in non-local way, thus significantly improving overall sensitivity to low magnetic fields for making layered materials to be promised for next generation sensing devices. The structure allows a graphene based magnetoresistance sensor to detect magnetic field normal to a sample plane, thus eliminating possibility of cross field error. The structure is designed such that graphene is available from different sources such as food, insect and waste, so that the graphene based magnetoresistance sensor can be formed with low cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a magnetic field sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a multilayer graphene based magnetoresistance sensor with electrodes. Graphene based magnetoresistance sensor (100) Base layer (106) Electrodes (110-118) Multilayer graphene structure (120) Substrate (129)