▎ 摘　　要

NOVELTY - The CCD has a gate (1), a metal silicide (2), and a semiconductor silicon substrate (3) from bottom to top, and an oxide insulating layer (4). The upper surface of the oxide insulating layer is provided with a source (5) and a drain (6). The upper surface of the drain is covered with a single-layer graphene film (7). The single-layer graphene film is in contact with the source and the drain, and does not exceed the range defined by the source and the drain. The metal silicide is located under the semiconductor silicon substrate. The range of the metal silicide completely covers the entire area of the semiconductor silicon substrate. The contact between the metal silicide and the semiconductor silicon substrate is good to form a heterojunction. The thickness of the metal silicide is 100 nanometer (nm) to 200 nm. USE - Graphene field-effect CCD such as integrated circuit. ADVANTAGE - The CCD expands spectral response range of a silicon-based charge coupled device in an infrared wave band, keeps small silicon-based charge coupled device (CCD) noise, and has high reliability, mature technique, and low cost. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a structure of a graphene field-effect CCD containing a metal silicide infrared absorption layer. Gate (1) Metal silicide (2) Semiconductor silicon substrate (3) Oxide insulating layer (4) Source (5) Drain (6) Single-layer graphene film (7)