▎ 摘　　要

NOVELTY - Preparing an electronic material called silicon intercalated epitaxial monolayer graphene comprises growing large scale high-quality graphene on metal surface, depositing silicon on the prepared epitaxial graphene and annealing to high temperature to intercalate the silicon to an interface of graphene and metal surface where numbers of silicon layers on the interface can be controlled depending on the quantity of the silicon deposited on the graphene surface. USE - The method is used for preparing an electronic material called silicon intercalated epitaxial monolayer graphene (claimed). ADVANTAGE - The method is for preparing the electronic material, large scale high-quality silicon intercalated epitaxial monolayer graphene on metal surface. Depending on the quantity of the silicon deposited on the graphene surface, the numbers of the silicon layers on the interface can be controlled and adjusted.