▎ 摘　　要

NOVELTY - The absorber has metal gold substrate (1), silicon dioxide dielectric layer (2), silicon dielectric layer (3) and graphene layer (4). The metal has a thickness of 100 nm and is used for the substrate. The intermediate silicon dioxide dielectric layer has thickness of 380 nm. The silicon dielectric layer has a thickness of 480 nm. The cross-shaped well has a length of 500 nm, width of100 nm, and depth of 300 nm and is hollowed out. The top layer is covered with a layer of graphene, and is stacked in turn to form a complete absorber. USE - Graphene ultra-surface microstructure high efficiency adjustable absorber. ADVANTAGE - The perfect impedance matching is achieved at the resonant frequency point. The magnetic resonance and electrical resonance achieve synchronization. The absorbing effect is realized through the super-surface structure of graphene. The absorber has strong absorption and tunability. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the graphene ultra-surface microstructure high efficiency adjustable absorber. Metal gold substrate (1) Silicon dioxide dielectric layer (2) Silicon dielectric layer (3) Graphene layer (4)