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  • 专利标题:   Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.
  • 专利号:   CN102336588-A, WO2013013418-A1, US2013078424-A1, CN102336588-B
  • 发明人:   DING G, JIANG M, TANG S, XIE X
  • 专利权人:   CHINESE ACAD SCI SHANGHAI MICROSYSTEM, SHANGHAI INST MICROSYSTEM INFORMATION, DING G, TANG S, XIE X, JIANG M, CAS SHANGHAI INST OPTICS FINE MECHANIC
  • 国际专利分类:   B82Y040/00, C01B031/04, C04B041/53, C23C016/34, C23C016/56, C30B033/02, C01B021/064, C01B035/08, H01L029/00, C23C016/02
  • 专利详细信息:   CN102336588-A 01 Feb 2012 C04B-041/53 201224 Pages: 7 Chinese
  • 申请详细信息:   CN102336588-A CN10247262 25 Aug 2011
  • 优先权号:   CN10206590, WOCN078061

▎ 摘　　要

NOVELTY - A hexagonal boron nitride substrate consists of boron nitride substrate layer and single atom layer. USE - Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of the hexagonal boron nitride substrate, which involves cleaving surface of boron nitride substrate, introducing mixture of hydrogen and argon into cleaved surface and annealing.