▎ 摘　　要

NOVELTY - The method involves depositing a semiconductor channel layer above a surface of a substrate. An amorphous carbon layer is deposited on a semiconductor channel layer. A source (104) and drain layers are deposited on the amorphous carbon layer. The amorphous carbon layer is formed using plasma enhanced chemical vapor deposition process, where heating occurs at temperature between 120 degree Celsius and 500 degree Celsius for a time between 1 minute and 60 minutes. USE - Method for processing i.e. plasma enhanced chemical vapor deposition (PECVD), using graphene during manufacture of microelectronic devices. ADVANTAGE - The method enables providing a buffer layer that allows growth of reasonably low-defect semiconductor channel structures of high-mobility semiconductors such as germanium on a silicon substrate. The method enables providing fundamentally different device fabrication challenges, allowing the process to be optimized in a more controlled fashion and reducing required size for the semiconductor channel. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a typical semiconductor device. P-doped substrate (101) N-doped well (102) Source (104) Drain region (106) Forming channel (108)