▎ 摘　　要

NOVELTY - Diode structure comprises a substrate (100), a pillar stack arranged on the substrate, and comprising a first semiconductor layer, a silicon layer (141) and a second semiconductor, and a first barrier layer arranged between the first and silicon layers and configured to prevent the dopants in the first layer from diffusing into the silicon layer. The first and second layers respectively have different dopants such that a conductivity of the first is different from that of the second. The barrier layer is made of conductive material. The pillar stack further comprises an electrode layer (120). The pillar stack sequentially comprises first semiconductor layer, first barrier layer, silicon layer, and second semiconductor layer from the substrate. The pillar stack further comprises an electrode layer arranged between the first semiconductor layer and the substrate, and a second barrier layer. USE - The diode structure is useful in electronic applications such as power circuits or voltage converters. ADVANTAGE - The diode structure is able to maintain the doping concentration of the doped regions. The first barrier layer is configured to prevent the dopants in the first semiconductor layer from diffusing into the silicon layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for fabricating a diode structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the diode structure. Substrate (100) Electrode layer (120) Silicon layer (141)