▎ 摘　　要

NOVELTY - The method involves using (S12) chemical vapor deposition to grow a first single-layer graphene on the etched metal layer that is fixed by the fixing portion. The etched metal layer is removed (S13) after preparing a temporary substrate layer. The first single-layer graphene is transferred with the temporary substrate layer to a first metal electrode on a pre-prepared flexible substrate, and the temporary substrate layer is removed (S14). The first single-layer graphene is selectively doped (S15) to obtain doped graphene. The pre-prepared undoped single-layer graphene is placed on the second metal electrode on the flexible substrate, and the contact between the undoped single-layer graphene and the doped graphene area is made (S16). A transparent gate layer is prepared on the top of the device, and a position is covered (S17) corresponding to the contact area on the undoped single-layer graphene to obtain a flexible light detection device by a portion of the transparent gate layer. USE - Method for manufacturing graphene-based flexible light detection device (claimed) used in flexible electronics. ADVANTAGE - The manufacturing method of the manufacturing device is simple. The semiconductor is used to realize the manufacture of the device, so that the manufacturing efficiency of the device is high, the cost is low, and the interface problem and the lattice mismatch problem in the related technology are overcome. The manufactured device provides good mechanical properties, chemical resistance, acid and alkali resistance, improves the durability, stability and reliability of the device. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for manufacturing a graphene-based flexible light detection device. (Drawing includes non-English language text) Step for using chemical vapor deposition to grow a first single-layer graphene on the etched metal layer (S12) Step for removing the etched metal layer (S13) Step for transferring the first single-layer graphene with the temporary substrate layer, and removing the temporary substrate layer (S14) Step for selectively doping the first single-layer graphene to obtain doped graphene (S15) Step for placing the pre-prepared undoped single-layer graphene on the second metal electrode, and making the contact between the undoped single-layer graphene and the doped graphene area (S16) Step for preparing a transparent gate layer on the top of the device, and covering a position corresponding to the contact area on the undoped single-layer graphene (S17)