▎ 摘　　要

NOVELTY - The electrode (22) has graphene sheets electrically connected and overlapped with each other, where diameter of each graphene sheet is from 10 micrometers to 1 mm. Quantity of the graphene sheets is from 1 to 1000, and electrical resistance of the electrode is less than or equal to 1 ohm per cm. Light transmittance of the electrode is greater than or equal to 70 percent. The graphene sheets are doped with boron to form a P-type semiconducting layer (24). Each graphene sheet is doped with nitrogen to form an N-type semiconducting layer (25). USE - Graphene transparent electrode for use in a graphene LED (claimed) that is utilized in a rollable display, electronic-picture and electronic-paper, and for sterilization of food or photo-curing processing. ADVANTAGE - The graphene sheet doped with boron is used as material of the P-type semiconducting layer, so that thickness of the P-type semiconducting layer is reduced and semiconductivity of the P-type semiconducting layer is improved. The LED uses graphene as raw material, thus reducing manufacturing cost of the electrode. The graphene sheets have high transparency, thus increasing brightness of the LED and increasing lifespan of the LED. The LED is ultra thin, and has high chromaticity and low power consumption, so that the LED has a high commercial value. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a graphene LED comprising a substrate (2) a method for fabricating a graphene LED. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene LED. Graphene transparent electrode (22) P-type semiconducting layer (24) N-type semiconducting layer (25) Upper electrode (26) Reflective layer (27)