▎ 摘　　要

NOVELTY - Graphene film patterning by magnetic field-assisted UV light oxidation includes placing magnetic field generating device on a sample rack (8) of UV light oxidation vacuum equipment, adjusting the magnetic field of the UV light oxidation vacuum equipment to a preset magnetic field, where the magnetic field in the reaction chamber and the gradient direction of the magnetic field in the reaction chamber are both vertical to the sample rack; placing a sample (13) with a mask (14) on the surface of sample rack, and adjusting the distance between the sample rack and a light source (6) to a preset distance; discharging air in the reaction chamber (1), when the preset conditions are reached, closing a chamber valve or filling nitrogen, turning on UV source and irradiating the sample, and controlling the irradiation time; and after irradiation is finished, discharging gas in the reaction chamber. USE - The method is for graphene film patterning by magnetic field-assisted UV light oxidation. ADVANTAGE - The method controls the UV light to generate directional movement of paramagnetic hydroxy (OH) (X2II) radicals, and has enhanced oxidation etching effect. DETAILED DESCRIPTION - Graphene film patterning by magnetic field-assisted UV light oxidation comprises placing magnetic field generating device on a sample rack (8) of UV light oxidation vacuum equipment, adjusting the magnetic field of the UV light oxidation vacuum equipment to a preset magnetic field, where the magnetic field in the reaction chamber and the gradient direction of the magnetic field in the reaction chamber are both vertical to the sample rack; placing a sample (13) with a mask (14) on the surface of sample rack, and adjusting the distance between the sample rack and a light source (6) to a preset distance; discharging air in the reaction chamber (1), when the preset conditions are reached, closing a chamber valve or filling nitrogen, turning on UV source and irradiating the sample, and controlling the irradiation time; after irradiation is finished, discharging gas in the reaction chamber; introducing nitrogen through the nitrogen inlet (2) to take out a sample or introducing water vapor through the water vapor inlet (3) to start a magnetic field to assist UV light oxidation, and finishing the preparation of the film patterning. An INDEPENDENT CLAIM is included for magnetic-field-assisted UV light oxidation graphene film patterning device. DESCRIPTION OF DRAWING(S) - The drawing is a schematic view illustrating the method for graphene film patterning by magnetic field-assisted UV light oxidation. Reaction chamber (1) Nitrogen inlet (2) Water vapor inlet (3) Light source (6) Sample rack (8) Sample (13) Mask (14)