• 专利标题:   Forming graphite-based structure involves patterning substrate thus forming elements, creating graphene initiating layer on first side wall of first element, and generating graphene on first side wall using graphene initiating layer.
  • 专利号:   WO2014121156-A1, US2015376778-A1
  • 发明人:   DAVIS M A
  • 专利权人:   SOLAN LLC, DAVIS M A
  • 国际专利分类:   H01L021/02, H01L021/20, H01L029/66, C23C016/26, G03F007/36, H01L021/768, H05K003/40
  • 专利详细信息:   WO2014121156-A1 07 Aug 2014 H01L-021/02 201459 Pages: 81 English
  • 申请详细信息:   WO2014121156-A1 WOUS014342 01 Feb 2014
  • 优先权号:   US759860P, US14765258

▎ 摘  要

NOVELTY - Forming a graphite-based structure involves: (A) patterning a substrate thus forming elements, each respective element in the set of elements separated from an adjacent element by a corresponding trench in trenches on the substrate; (B) creating a graphene initiating layer on the first side wall of the first element; and (C) generating graphene on the first side wall using the graphene initiating layer thus forming the graphite-based structure. USE - The method is useful for forming graphite-based structure (claimed). ADVANTAGE - Methods for segmented graphene growth are provided that overcome the limitations in conventional approaches to obtaining segmented graphene layers. The fabrication processes allow for improved control in device fabrication, improved spatial resolution, and packing density of the segmented graphene layers. DETAILED DESCRIPTION - Forming a graphite-based structure involves: (A) patterning a substrate thus forming elements, each respective element in the set of elements separated from an adjacent element by a corresponding trench in trenches on the substrate, where: (i) a first element in the set of elements has a first surface; (ii) a first trench in the set of trenches separates the first element from an adjacent element in the set of elements, the first trench having a second surface; (iii) the first surface and the second surface are separated by a first side wall of the first element; (iv) the first surface is characterized by a first elevation; (v) the second surface is characterized by a second elevation; (vi) a first orthogonal projection of the first surface and a second orthogonal projection of the second surface onto a common plane are contiguous or overlapping; and (vii) the first elevation is other than the average elevation; (B) creating a graphene initiating layer on the first side wall of the first element; and (C) generating graphene on the first side wall using the graphene initiating layer thus forming the graphite-based structure. An INDEPENDENT CLAIM is included for a graphite-based structure fabricated by the method above.