▎ 摘　　要

NOVELTY - The method involves treating a surface of a substrate (110) placed in a reaction chamber with plasma while applying a bias to the substrate. The graphene (150) is grown on the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD). The substrate includes at least one of a group IV semiconductor material, semiconductor compound, metal, and insulating material. A pretreatment gas includes an inert gas, hydrogen, oxygen, ammonia, chlorine, bromine, fluorine, and fluorocarbon. A bias power ranging from 1W-100W is supplied to the substrate. The surface of the substrate is treated at a processing pressure of about 0.02 torr to about 5.0 torr. USE - Method of forming graphene on substrate of semiconductor device. ADVANTAGE - The graphene has high electrical mobility, satisfactory thermal characteristics, chemical stability, and a wide surface area. The semiconductor device including graphene is easily fabricated through low-temperature processes. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the method for forming graphene. Substrate (110) Graphene (150)