• 专利标题:   Depositing aluminum nitride film epitaxially on glass substrate involves providing monolayer graphene on temporary substrate, and transferring provided monolayer graphene on temporary substrate into glass substrate.
  • 专利号:   CN106048555-A
  • 发明人:   AN P, ZHAO L, WEI T, CHEN Z, WANG J, LI J
  • 专利权人:   INST SEMICONDUCTORS CHINESE ACAD SCI
  • 国际专利分类:   C23C016/26, C23C016/44, H01L033/00, H01L033/32
  • 专利详细信息:   CN106048555-A 26 Oct 2016 C23C-016/26 201701 Pages: 8 Chinese
  • 申请详细信息:   CN106048555-A CN10370844 30 May 2016
  • 优先权号:   CN10370844

▎ 摘  要

NOVELTY - Depositing aluminum nitride film epitaxially on glass substrate involves providing monolayer graphene on temporary substrate, and transferring provided monolayer graphene on temporary substrate into glass substrate. The epitaxial aluminum nitride (AlN) thin film is deposited on glass substrate having monolayer graphene graphene on its surface. USE - Method for depositing aluminum nitride film epitaxially on glass substrate (claimed). ADVANTAGE - The method enables to deposit aluminum nitride film epitaxially on glass substrate, which utilizes utilizes graphene as intercalation layer to solve problem of lattice mismatch between epitaxial film and the amorphous glass substrate, provides template for AlN epitaxy and improves quality of epitaxial AlN film on amorphous substrate.